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【文件名】:07812@52RD_ESD in Silicon Integrated Circuits (Second Edition).pdf
【格 式】:pdf
【大 小】:4019K
【简 介】:
In the seven years since the first edition of this book was completed, Electrostatic
Discharge (ESD) phenomena in integrated circuits (IC) continues to be important
as technologies shrink and the speed and size of the chips increases. The phenomena
related to ESD events in semiconductor devices take place outside the realm of
normal device operation. Hence, the physics governing this behavior are not typically
found in general textbooks on semiconductors. Similarly the circuit design
issues involve nonstandard approaches that are not covered in general books on
electronic design. There has been a large amount of work done in the areas of
ESD circuit design and the physics involved, most of which has been published
in a number of papers and conference proceedings. This book covers the stateof-
the-art in circuit design for ESD prevention as well as the device physics, test
methods, and characterization. We also include case studies showing examples of
approaches to solving ESD design problems.
【目 录】:
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