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[资料] RFIC设计资料

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发表于 2006-11-20 00:52:46 | 显示全部楼层 |阅读模式
包括低噪声放大器,混频器,锁相环,移相器,混频器等设计理论,望各位支持,由于急需RD币,所以这次不能免费,忘谅解
摘抄部分:
Amplifier Design Tutorial
Introduction
This tutorial will set out the design stages required to design a theoretical microwave amplifier with the following specification shown in Table 1:
Table 1 Required Specification
The first stage in the design process is to pick a suitable device. For X-Band and above GaAs MESFETS are used while at lower frequencies Bipolar devices are used if noise is not so critical. Try to pick a device design for the range of frequencies you require. Don’t for example use an X-band device for an LNA at UHF – you are bound to run into stability problems. Also pick a device that will give you plenty of gain margin to allow for noise mismatching etc.

【文件名】:061120@52RD_rfic设计资料.rar
【格 式】:rar
【大 小】:3629K
【简 介】:
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发表于 2006-11-20 15:29:50 | 显示全部楼层
先謝謝樓主
收下了
[em01]
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 楼主| 发表于 2006-11-20 23:05:00 | 显示全部楼层
不好意思,等稍微筹点币之后,以后尽量都免费
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