读功放管DATASHEET的比较简单的问题

td_scdma_3g

RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
• Typical Two-Tone Performance @ 2170 MHz:（这个频率是两双音频率的中心频率吗？）[/COLOR] VDD = 28 Volts, IDQ =
130 mA, Pout = 10 Watts PEP（PEP是什么含义啊）[/COLOR]
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — -34 dBc
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA,
Pout = 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability（PAR是峰均比吗？0.01％表示什么）[/COLOR]Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — -47 dBc in 3.84 MHz Channel Bandwidth（IM3指什么，和IMD有什么关系？）[/COLOR]ACPR @ 5 MHz Offset — -49 dBc in 3.84 MHz Channel Bandwidth
• Typical Single - Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =
130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930 -1990 MHz),
IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth
= 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency— 16%
ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout =
4 Watts Avg., Full Frequency Band (1805 -1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power

我试着想做做功放，管子是MRF6S20010NR1和MRF6S20010GNR1,有没有人用过啊
还有这两个管子型号差一个G，有什么区别啊[/COLOR]