NXP Introduces Gen8 LDMOS Technology for Bandwidth Intensive Base Stations

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NXP Introduces Gen8 LDMOS Technology for Bandwidth Intensive Base Stations
Press Release Source: NXP Semiconductors On Wednesday June 8, 2011, 12:05 pm
EINDHOVEN, NETHERLANDS and BALTIMORE, MD--(Marketwire - 06/08/11) - NXP Semiconductors N.V. (NASDAQ:NXPI - News) today introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations -- allowing signal bandwidths up to 60MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers.

NXP's Gen8 LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors are being sampled for applications up to 960MHz with excellent linearization capabilities, extreme ruggedness and efficiencies in excess of 55 percent for multicarrier GSM power amplifiers. The second wave of products will cover GSM-WCDMA-LTE at 1800, 1900 and 2100 MHz and will sample during 2011.

Wireless infrastructure providers are under increasing pressure to bring cost-effective and power-efficient base stations to market quickly. The pressures are extending beyond emerging countries into the more mature markets, and are further compounded by the multiplicity of cellular standards, frequency bands and network sharing requirements for rural deployments. NXP's Gen8 LDMOS technology is designed to address each of these challenges to deliver multiband and wideband power amplifiers, as well as multi-mode base transceiver stations (BTS) -- with a low-energy, cost-optimized footprint.

Key Features


•NXP's Gen8 LDMOS RF power transistors offer more bandwidth, more power, better electrical efficiency in a smaller form factor and at a lower cost. •Compared to the previous generation, Gen8 increases power density by 15 percent and improves power efficiency by around 5 percent (depending on the application).
•Peak power levels above 500 watts (P3dB) are now possible out of small and cost-effective SOT502-sized packages for peaking transistors.
•Increased video bandwidth now allows full-band operation.
•NXP's LDMOS technology used in RF power transistors typically runs at 28 V to 32 V, and delivers record performance up to 3.8 GHz.

Supporting Quote


•Christophe Cugge, director of marketing, base station power amplifiers, NXP Semiconductors, said: "Wireless base station technology is continuously evolving to follow the growing use of bandwidth-intensive applications. NXP's Gen8 LDMOS offers base station OEMs low-cost, highly-efficient technology to manufacture multi-standard, future-proof solutions with better production yields through tighter specifications for mass production. NXP has several Gen8 LDMOS reference designs in development, including asymmetric and 3-way Doherty amplifiers."

Links


•Video: NXP's LDMOS technology
•Video: NXP's Doherty RF power amplifiers for cellular base stations
•NXP's High Performance RF technologies
•NXP RF Manual, 15th edition

Availability
Attendees at IEEE MTT-S International Microwave Symposium (IMS2011) in Baltimore can find out more about NXP's Gen8 LDMOS base station transistors at booth 420, June 6-9, 2011. Gen8 LDMOS transistors will be available from Q3 2011.

About NXP HPRF
Shipping more than 4 billion RF products annually, NXP is a clear industry leader in High Performance RF. From satellite receivers, cellular base stations and broadcast transmitters to ISM (Industrial, Scientific, and Medical) and aerospace and defense applications, NXP is a leader in High Performance Mixed Signal IC products and the recognized leader in SERDES-based serial interfaces for high speed converters. NXP offers a broad selection of high-speed data converters, with digital interfaces including JESD204A compliant CGV, CMOS LVCMOS and LVDS DDR interfaces. These high speed converters are suitable for wireless infrastructure, industrial, scientific, medical, aerospace and defense applications.