NXP Brings GaN Technology Mainstream,50W,100W to 3.5Ghz

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NXP Brings GaN Technology Mainstream


NXP, a world leader in High Performance RF, to offer both LDMOS and GaN solutions for high-efficiency RF Power applications



Eindhoven, Netherlands and Baltimore, Maryland, June 6, 2011 – At IMS2011 this week, NXP Semiconductors N.V. (NASDAQ: NXPI) is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology. The GaN demo includes a 50-W wideband amplifier, the CLF1G0530-50, covering 500 to 3000 MHz; 2.1-GHz and 2.7-GHz Doherty power amplifiers for base stations; and a 100-W amplifier, the CLF1G2535-100, covering 2.5 - 3.5 GHz. NXP has developed its high-frequency, high-power GaN process technology in collaboration with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics. NXP is now uniquely positioned as the largest semiconductor company to offer both LDMOS and GaN solutions. Engineering samples of NXP’s first GaN power amplifiers are available immediately.



Facts / Highlights
NXP’s GaN devices are manufactured on SiC substrates for enhanced RF and thermal performance.
Target end-user applications for NXP’s GaN include cellular communications, wideband amplifiers, ISM, PMR, radar, avionics, RF lighting, medical, CATV and digital transmitters for cellular and broadcast.
With its high power densities, GaN has the potential to expand into applications such as high power broadcast applications, where solid-state power amplifiers built with vacuum tubes are still the norm.
While most base station power amplifiers today are limited to specific applications, NXP’s new GaN process technology supports a roadmap towards a “universal transmitter” that can be applied in multiple systems and frequencies, simplifying transmitter production and logistics, and allowing operators to switch between frequency bands to instantly meet demands in a base station’s coverage area.
NXP’s GaN broadband power amplifiers are expected to be available for volume production at the end of 2011.


Supporting Quotes
“As GaN continues to gain traction, the entry of major semiconductor companies such as NXP helps to validate GaN as a ‘technology of choice’ for RF power semiconductors, and will help to accelerate broader adoption,” said ABI Research director Lance Wilson.
“We were overwhelmed by the extraordinarily positive response to our GaN roadmap presentation at CS Europe earlier this year, from customers and partners, as well as other semiconductor companies – in large part due to the economies of scale we’re able to bring to the equation. As we release new products based on GaN, we’ll also be working with our partners to build a European supply chain that optimizes costs at every step in the value chain, and continue to offer our customers choice when it comes to selecting the best alternatives – LDMOS or GaN – for high-efficiency applications,” John Croteau, senior vice president and general manager, high performance RF, NXP Semiconductors.


Links
NXP GaN technology
NXP RF Manual, 15th Edition


About NXP HPRF
Shipping more than 4 billion RF products annually, NXP is a clear industry leader in High Performance RF. From satellite receivers, cellular base stations and broadcast transmitters to ISM (Industrial, Scientific, and Medical) and aerospace and defense applications, NXP is a leader in High Performance Mixed Signal IC products and the recognized leader in SERDES-based serial interfaces for high speed converters. NXP offers a broad selection of high-speed data converters, with digital interfaces including JESD204A compliant CGV, CMOS LVCMOS and LVDS DDR interfaces. These high speed converters are suitable for wireless infrastructure, industrial, scientific, medical, aerospace and defence applications.

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