NXP Introduces New Plastic Packages for RF Power Transistors

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NXP Introduces New Plastic Packages for RF Power Transistors
Cost-Effective Package Solutions for All RF Applications

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Companies:NXP Semiconductors NV.

The NXP BLP05H6500P is a Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications -- part of a new line of overmolded plastic (OMP) RF power devices from NXP.

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EINDHOVEN, NETHERLANDS--(Marketwire - 06/03/11) - NXP Semiconductors N.V. (NASDAQ:NXPI - News) today announced the launch of a complete line of overmolded plastic (OMP) RF power devices with peak powers ranging from 2.5 to 200 Watts. The new range of OMP devices will be introduced as a complement to NXP's extensive range of products in ceramic packages, providing customers a choice for more cost-sensitive applications, while maintaining the required level of RF performance.

NXP's OMP roadmap covers all the high-volume frequency ranges and applications: 10 - 500-MHz ISM, 470 860-MHz broadcast, 700 - 2200-MHz GSM, WCDMA telecom, 2300 - 2700-MHz LTE telecom, 2.45 GHz ISM, and even products for the 2700 - 3500-MHz S-band. Product types will extend to all existing categories: discrete pre-drivers (2.5 - 10 W), drivers (20 - 45 W), MMICs (20 - 60 W), finals (50 - 200 W) and integrated Doherty devices (50 - 110 W).

OMP products up to 10 W will utilize NXP's existing IC packages, with new footprint packages developed for higher powers. For customers using full surface mount assembly, gull-wing versions will be available in addition to traditional straight-lead versions. A limited selection of devices is available today as engineering samples, with volume production scheduled to start in Q4 2011.

Product Features


•Product solutions from DC to 3500 MHz
•Single-stage broadband drivers in HVSON, from 2.5 to 10W
•Single-stage drivers from 25 to 45 W
•Dual-stage MMICs from 20 to 60 W which can be used as high-gain drivers or combined as low power dual-stage Doherty amplifiers
•Fully integrated plug-and-play Doherty PAs in a single package (50 to 110 W)
•SOT502-sized, single-ended and push-pull final transistors ranging from 50 to 200 W