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[资料] 书,SiGe Heterojunction Bipolar Transistors

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发表于 2009-4-22 10:52:21 | 显示全部楼层 |阅读模式
SiGe Heterojunction Bipolar Transistors
2003
Preface xiii
Physical Constants and Properties of Silicon and
Silicon-Germanium xvii
List of Symbols xix
1 Introduction 1
1.1 Evolution of Silicon Bipolar Technology 1
1.2 Evolution of Silicon-Germanium HBT Technology 3
1.3 Operating Principles of the Bipolar Transistor 5
References 10
2 Basic Bipolar Transistor Theory 13
2.1 Introduction 13
2.2 Components of Base Current 13
2.3 Fundamental Equations 16
2.3.1 Assumptions 17
2.4 Base Current 19
2.4.1 Base Current in Shallow Emitters 20
2.4.2 Base Current in Deep Emitters 21
2.4.3 Recombination Current in the Neutral Base 22
2.5 Collector Current 23
2.6 Current Gain 24
2.7 Gummel Numbers 25
3 Heavy Doping Effects 27
3.1 Introduction 27
3.2 Majority and Minority Carrier Mobility 28
【文件名】:09422@52RD_SiGe Heterojunction Bipolar Transistors .pdf
【格 式】:pdf
【大 小】:1992K
【简 介】:
【目 录】:


发表于 2011-6-15 09:13:43 | 显示全部楼层
thanks for your sharing
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