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我是新手,在资料上看到过PEP功率,AVG功率,CW功率,请问大家这几种表示具体区别在哪里,之间有没有什么换算关系呢
谢谢,功放管计算效率时拿那个计算是怎么考虑的呢?
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
• Typical Two-Tone Performance @ 2170 MHz:(这个频率是两双音频率的中心频率吗?) VDD = 28 Volts, IDQ =
130 mA, Pout = 10 Watts PEP(PEP是什么含义啊)
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — -34 dBc
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA,
Pout = 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability(PAR是峰均比吗?0.01%表示什么)Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — -47 dBc in 3.84 MHz Channel Bandwidth(IM3指什么,和IMD有什么关系?)ACPR @ 5 MHz Offset — -49 dBc in 3.84 MHz Channel Bandwidth
• Typical Single - Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =
130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930 -1990 MHz),
IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth
= 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency— 16%
ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout =
4 Watts Avg., Full Frequency Band (1805 -1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power |
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