英文原版Fundamentals of RF Circuit Design （Jeremy Everard 2001）

PlumJiang

Preface xiii
1 Transistor and Component Models at Low and High 1
Frequencies
1.1 Introduction 1
1.2 Transistor Models at Low Frequencies 2
1.2.1 ‘T’ Model 2
1.2.2 The π Transistor Model 6
1.3 Models at High Frequencies 6
1.3.1 Miller Effect 12
1.3.2 Generalised ‘Miller Effect’ 13
1.3.3 Hybrid π Model 15
1.4 S Parameter Equations 19
1.5 Example Calculations of S21 20
1.5.1 Medium Current RF Transistor – 10 mA 20
1.5.2 Lower Current Device – 1 mA 23
1.6 Common Base Amplifier 26
1.7 Cascode 28
1.8 Large Signal Modelling – Harmonic and Third Order Intermodulation 30
Distortion
1.8.1 Common Emitter Distortion 30
1.8.2 Third Order Intermodulation Products
1.8.3 Differential Amplifier 35
1.9 Distortion Reduction Using Negative Feedback 40
1.10 RF MOSFETs 42
1.10.1 Small Signal Analysis 43
1.10.2 Capacitive Terms 43
1.10.3 Transition Frequency fT 44
1.10.4 MOSFETs y Parameters 44
1.10.5 Dual Gate MOSFETs 45
1.11 Diode Detectors 48
1.11.1 Minimum Detectable Signal Level – Tangential Sensitivity 52
1.12 Varactor Diodes 52
1.13 Passive Components 53
1.13.1 Resistors 54
1.13.2 Capacitors 56
1.13.3 Inductors 58
1.14 References and Bibliography 62
2 Two Port Network Parameters 63
2.1 Introduction 63
2.2 Impedance Parameters 66
2.3 Admittance Parameters 68
2.4 Hybrid Parameters 70
2.5 Parameter Conversions 71
2.6 Travelling Wave and S Parameters 73
2.6.1 Revision of Transmission Lines 73
2.6.2 Transmission Lines (Circuit Approach) 76
2.6.3 Characteristic Impedance 79
2.6.4 Impedance Along a Line Not Terminated in Z0 80
2.6.5 Non Ideal Lines 82
2.6.6 Standing Wave Ratio (SWR) 82
2.7 Scattering Parameters 82
2.7.1 Example Calculation Using S Parameters 87

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