Si-Ge HBT低噪声放大器的设计

andy

Abstract—An SiGe HBT low-noise amplifier (LNA) with a
novel diode/resistor dual base bias-feed circuit is described. The
dual bias-feed circuit extends 1 dB without degradation of
the noise figure (NF). In the small-signal region, a conventional
resistor bias-feed circuit is a dominant base current source and,
in the large-signal region, the diode turns on and the diode
bias-feed circuit supplies the base current like a voltage source,
which allows higher output power and linearity. In this paper, the
operation principle of the dual bias-feed circuit is explained by
using a virtual current source model, which indicates the increase
of base current of the HBT in a large-signal region. The design
method is also described for the idle current of the diode bias-feed
circuit in a small-signal region from the points-of-view of NF and
1 dB. The effectiveness of the dual bias-feed circuit is evaluated
by simulation and measurement. The fabricated 2-GHz-band
dual bias-feed LNA has the 1 dB improvement of 5 dB and no
degradation NF compared with the conventional resistor bias-feed
LNA.
Index Terms—Microwave bipolar transistor, monolithic
microwave integrated circuit (MMIC) amplifiers, silicon, UHF
amplifiers.
【文件名】:06913@52RD_A dual bias-feed circuit design for SiGe HBT low-noise linear amplifier.pdf
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