|
In today’s rapidly expanding RF
and microwave markets, numerous
designs must operate over
multiple octaves of frequency spectrum.
Some of the more common of
these include broadband bias networks
such as transistor emitter and
FET source bypassing, transistor collector
and FET drain feed structures,
as well as interstage RF coupling, DC
blocking and wideband impedance
matching.
This article will explore various
ways to accommodate broadband
application designs with the proper
selection of capacitive elements. The
first part of this discussion will
address the implementation of a single
capacitor solution followed by a
multiple capacitor approach. Pertinent electrical
design parameters, such as the magnitude of
the impedance, insertion loss and the capacitor’s
parasitic elements, will be examined in
detail for each method.
【文件名】:06816@52RD_Capacitors in Broadband Applications.pdf
【格 式】:pdf
【大 小】:291K
【简 介】:
【目 录】:
|
本帖子中包含更多资源
您需要 登录 才可以下载或查看,没有账号?注册
×
|