RA30H1317M

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RA30H1317M
品牌三菱  频段:135-175 MHz 发射功率:30 W  外形尺寸:68*21*9.8 mm
DESCRIPTION
The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
3.5V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
RoHS COMPLIANCE
• RA30H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.

描述
RA30H1317M是30-watt RF MOSFET放大器
在12.5-volt操作135-范围175-MHz移动无线电模块.
电池可以直接连接到漏
增强型MOSFET晶体管.没有门
电压(VGG到只有一小漏电流流动=0V),
沥干的RF输入信号衰减到60 dB.随着栅极电压的增加,输出功率和漏电流
.随着周围3.5V（最小）栅极电压,输出功率和
大幅消耗电流增加.额定输出功率
可用4V（典型值）和5V（最高）.在VGG=5V,典型的大门电流是1 mA.
非线性FM调制模块设计,但也可以通过设置静态漏电流与栅极电压和控
制输出功率与输入功率线性调制.

特点
•增强型MOSFET晶体管
(IDD≅0@ VDD=12.5V, VGG=0V)
• Pout>30W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•宽带频率范围：135-175MHz
•低功耗控制电流 IGG=1mA (typ)在VGG=5V
•模块尺寸：66 x 21 x 9.88 mm
•线性操作可以通过设置静态漏
电流与栅极电压和输出功率控制与输入功率
全新原装正品供应：
三菱（MITSUBISHI）:（HF/VHF/UHF/900MHz（分立MOSFET）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、
RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、
RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1 RD06HHF1、等RD系列
三菱（MITSUBISHI）:
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1
RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、
RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、等RA系列
柯工 19878743292
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