【文件名】:0666@52RD_CRC Press - Analog BiCMOS Design[1]. Practices and Pitfalls.part1.rar
【格 式】:rar
【大 小】:1048K
【简 介】:The properties and performance of analog biCMOS integrated circuits are dependent on the devices used to construct them. This chapter is
a review of the operation of silicon devices. It begins with a discussion of conductivity and resistance. Simple physical models for bipolar transistors, MOS transistors, and junction and diffusion capacitance are developed.
【目 录】:
1 Devices
2 Device Models
3 Current Sources
4 Voltage References