Analog BiCMOS DESIGN（James C. Daly）

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【文件名】:06413@52RD_Analog BiCMOS design.pdf
【格　式】:pdf
【大　小】:2603K
【简　介】:
【目　录】:1 Devices
1.1 Introduction
1.2 Silicon Conductivity
1.2.1 Drift Current
1.2.2 Energy Bands
1.2.3 Sheet Resistance
1.2.4 Diffusion Current
1.3 Pn Junctions
1.3.1 Breakdown Voltage
1.3.2 Junction Capacitance
1.3.3 The Law of the Junction
1.3.4 Diffusion Capacitance
1.4 Diode Current
1.5 Bipolar Transistors
1.5.1 Collector Current
1.5.2 Base Current
1.5.3 Ebers-Moll Model
1.5.4 Breakdown
1.6 MOS Transistors
1.6.1 Simple MOS Model
1.7 DMOS Transistors
1.8 Zener Diodes
1.9 EpiFETs
1.10 Chapter Exercises
2 Device Models
2.1 Introduction
2.2 Bipolar Transistors
2.2.1 Early Effect
2.2.2 High Level Injection
2.2.3 Gummel-Poon Model
2.3 MOS Transistors
2.3.1 Bipolar SPICE Implementation
2.4 Simple Small Signal Models for Hand
Calculations
2.4.1 Bipolar Small Signal Model
2.4.2 Output Impedance
2.4.3 Simple MOS Small Signal Model
2.5 Chapter Exercises
3 Current Sources
3.1 Current Mirrors in Bipolar Technology
3.2 Current Mirrors in MOS Technology
Chapter Exercises
4 Voltage References
4.1 Simple Voltage References
4.2 Vbe Multiplier
4.3 Zener Voltage Reference
4.4 Temperature Characteristics of Ic and Vbe
4.5 Bandgap Voltage Reference
5 Amplifiers
5.1 The Common-Emitter Amplifier
5.2 The Common-Base Amplifier
5.3 Common-Collector Amplifiers (Emitter
Followers)
5.4 Two-Transistor Amplifiers
5.5 CC-CE and CC-CC Amplifiers
5.6 The Darlington Configuration
5.7 The CE-CB Amplifier, or Cascode
5.8 Emitter-Coupled Pairs
5.9 The MOS Case: The Common-Source
Amplifier
5.10 The CMOS Inverter
5.11 The Common-Source Amplifier with Source Degeneration
5.12 The MOS Cascode Amplifier
5.13 The Common-Drain (Source Follower)
Amplifier
5.14 Source-Coupled Pairs
5.15 Chapter Exercises
6 Comparators
6.1 Hysteresis
6.1.1 Hysteresis with a Resistor Divider
6.1.2 Hysteresis from Transistor Current Density
6.1.3 Comparator with Vbe-Dependent Hysteresis
6.2 The Bandgap Reference Comparator
6.3 Operational Amplifiers
6.4 A Programmable Current Reference
6.5 A Triangle-Wave Oscillator
6.6 A Four-Bit Current Summing DAC
6.7 The MOS Case
6.8 Chapter Exercises
7 Amplifier Output Stages
7.1 The Emitter Follower: a Class A Output Stage
7.2 The Common-Emitter Class A Output Stage
7.3 The Class B (Push-Pull) Output
7.4 The Class AB Output Stage
7.5 CMOS Output Stages
7.6 Overcurrent Protection
7.7 Chapter Exercises
8 Pitfalls
8.1 IR Drops
8.1.1 The Effect of IR Drops on Current Mirrors
8.2 Lateral pnp
8.2.1 The Saturation of Lateral pnp Transistors
8.2.2 Low Beta in Large Area Lateral pnps
8.3 npn Transistors
8.3.1 Saturating npn Steals Base Current
8.3.2 Temperature Turns On Transistors
8.4 Comparators
8.4.1 Headroom Failure
8.4.2 Comparator Fails When Its Low Input Limit Is
Exceeded
8.4.3 Premature Switching
8.5 Latchup
8.5.1 Resistor ISO EPI Latchup
8.6 Floating Tubs
8.7 Parasitic MOS Transistors
8.7.1 Examples of Parasitic MOSFETs
8.7.2 OSFETs
8.7.3 Examples of Parasitic OSFETs
8.8 Metal Over Implant Resistors
9 Design Practices
9.1 Matching
9.1.1 Component Size
9.1.2 Orientation
9.1.3 Temperature
9.1.4 Stress
9.1.5 Contact Placement for Matching
9.1.6 Buried Layer Shift
9.1.7 Resistor Placement
9.1.8 Ion Implant Resistor Conductivity Modulation
9.1.9 Tub Bias Affects Resistor Match
9.1.10 Contact Resistance Upsets Matching
9.1.11 The Cross Coupled Quad Improves Matching
9.1.12 Matching Calculations
9.2 Electrostatic Discharge Protection (ESD)
9.3 ESD Protection Circuit Analysis
9.4 Chapter Exercises