Semiconductor chip reliability is commonly improvedthrough burn-in. In this work burn-in effectivenes is modeled as a function of time, temperature, electrical stress, stress coverage and failure mechanism.Actual field data for a variety of products is used to validate or deduce the relevant burn-in parameters.
【文件名】:10328@52RD_Burn-in effectiveness-theory and measurement.pdf
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【大 小】:358K
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发表于 2010-3-28 19:03:11
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