Chapter 1. History of the High-Voltage Charge Pump
1.1 Using a Transformer to Generate High Voltages
1.2 The Cockcroft-Walton High-voltage Charge Pump
1.3 The Dickson Charge Pump
1.3.1 The body effect
1.3.2 Implication of body effect on the Dickson charge pump 7
1.4 Better Solutions
Chapter 2. Basic MOS Device Physics
2.1 The P-N Junction
2.1.1 Reverse bias
2.1.2 Forward bias
2.1.2 Forward bias
2.1.3 P-N junction diode characteristics
2.2 The MOS Capacitor
2.2.1 The flat band condition
2.2.2 Accumulation
2.2.3 Depletion
2.2.4 Weak inversion
2.2.5 Strong inversion
2.3 Capacitance Variation of a MOS
2.4 The Threshold Voltage
2.5 Metal-Oxide Field-Effect Transistor
2.5.1 Device operation
2.5.2 Second-order effects for MOSFET operation
2.6 Latch-up in CMOS Technology
2.7 Merits of PMOS Versus NMOS in Circuit Design
2.8 The MOSFET Model
2.9 SPICE Simulation Convergence
2.10 Conclusion
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发表于 2009-10-20 15:04:21
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