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Abstract--This paper conducts a RF
integrated circuits (RFIC) has been designed in a
0.35- m µ BiCMOS technology and simulated by
ADS (Advance Design Software) in 2.4 GHz low
noise Amplifier (LNA). The RFIC is composed of
LNA and input/output matching impedance based
the optimum design for the model inductance.
this paper, the results have been showed the
good performance as the excellent noise figure. In
particular, we are superior to [9-10] as good low
noise figure at 1.2dB, and then can get the high
performance LNA as following.
Finally, we show that a low noise with a
forward gain of 16dB for a RFIC in 2.4 GHz and
response in 25MHz ± ,and get that the RF receiver
front end is designed in a 0.35 um SiGe BiCMOS
process which is enable LNAs with low noise figure,
high-linearity, and low current consumption. A
high performance of the compact RFIC for our
design can be measured and simulated by the
QPSK and USB mode compatible transceiver
platform.
【文件名】:0938@52RD_2.4GHz BiCMOS RFIC.pdf
【格 式】:pdf
【大 小】:312K
【简 介】:
【目 录】:
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