Fully Integrated 60-GHz Single-Ended Resistive Mixer in 90-nm CMOS Technology

hujiajie2005

Abstract—This letter presents the design and characterization of
a fully integrated 60-GHz single-ended resistive mixer in a 90-nm
CMOS technology. A conversion loss of 11.6 dB, 1-dB compression
point of 6 dBm and IIP3 of 16.5 dBm were measured with a local
oscillator (LO) power of 4 dBm and zero drain bias. The possibility
of improvement in IIP3 with selective drain bias has been verified.
A 3-dB improvement in IIP3 was obtained with 150-mV dc voltage
applied at the drain. Microstrip transmission lines are used to realize
matching and filtering at LO and radio frequency ports.
Index Terms—CMOS, millimeter wave, monolithic microwave
integrated circuit (MMIC), 90 nm, resistive mixer, selective drain
bias, 60 GHz, V band.

hujiajie2005

【文件名】:06228@52RD_Fully Integrated 60-GHz Single-Ended Resistive Mixer in 90-nm CMOS Technology.pdf
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