BSIM3V3手册

DrXU

模拟电路设计到深处，就看对仿真模型的理解了。本手册提供给模拟工程师一个真正的了解模拟电路中器件仿真模型的机会。来自UC Berkley的经典文献。
CHAPTER 1:Introduction
General Information.......................................................................................1-1
Organization of Manual .................................................................................1-3
CHAPTER 2: Physics-Based Derivation of the I-V Model
Non-Uniform Doping and Small Channel Effects on Threshold Voltage .....2-1
Vertical Non-Uniform Doping Effect ......................................................2-3
Lateral Non-Uniform Doping Effect: ......................................................2-5
Short Channel Effect................................................................................2-7
Narrow Channel Effect ............................................................................2-12
Mobility Model ..............................................................................................2-14
Carrier Drift Velocity .....................................................................................2-17
Bulk Charge Effect.........................................................................................2-17
Strong Inversion Drain Current (Linear Regime)..........................................2-19
Intrinsic Case (Rds=0) .............................................................................2-19
Extrinsic Case (Rds>0) ............................................................................2-21
Strong Inversion Current and Output Resistance (Saturation Regime).........2-22
Channel Length Modulation (CLM)........................................................2-25
Drain-Induced Barrier Lowering (DIBL) ................................................2-26
Current Expression without Substrate Current Induced Body Effect ......2-27
Current Expression with Substrate Current Induced Body Effect ...........2-28
Subthreshold Drain Current ...........................................................................2-30
Effective Channel Length and Width:............................................................2-31
Poly Gate Depletion Effect ............................................................................2-32
CHAPTER 3: Unified I-V Model
Unified Channel Charge Density Expression ................................................3-1
Unified Mobility Expression .........................................................................3-6
Unified Linear Current Expression................................................................3-7
Intrinsic case (Rds=0) ..............................................................................3-7
Extrinsic Case (Rds > 0) ..........................................................................3-9
Unified Vdsat Expression ..............................................................................3-9
Intrinsic case (Rds=0) ..............................................................................3-9
Extrinsic Case (Rds>0) ............................................................................3-10
Unified Saturation Current Expression..........................................................3-11
Single Current Expression for All Operational Regimes of Vgs and Vds.....3-12
Substrate Current ...........................................................................................3-15
A Note on Vbs ...............................................................................................3-15
ii BSIM3v3 Manual Copyright © 1995, 1996, UC Berkeley
CHAPTER 4: Capacitance Model
General Information.......................................................................................4-1
A Note on Device Geometry Dependencies ..................................................4-3
Intrinsic Capacitance......................................................................................4-5
Background Information..........................................................................4-5
Basic Formulation....................................................................................4-6
Short Channel Model ...............................................................................4-9
New Single Equation Formulation ..........................................................4-11
Extrinsic Capacitance: Fringing Capacitance ................................................4-17
Extrinsic Capacitance: Overlap Capacitance .................................................4-17
Graphical Results ...........................................................................................4-20
CHAPTER 5: Non-Quasi Static Model
Background Information................................................................................5-1
The NQS Model in BSIM3v3........................................................................5-1
Model Formulation ........................................................................................5-2
CHAPTER 6: Parameter Extraction
Optimization strategy.....................................................................................6-1
Extraction Strategies ......................................................................................6-2
Extraction Procedure......................................................................................6-2
Parameter Extraction Requirements ........................................................6-2
Optimization ............................................................................................6-4
Extraction Routine ...................................................................................6-6
Notes on Parameter Extraction ......................................................................6-14
Parameters with Special Notes ................................................................6-14
Explanation of Notes ...............................................................................6-15
CHAPTER 7: Benchmark Test Results
Benchmark Test Types ...................................................................................7-1
Benchmark Test Results (Figures) .................................................................7-2
CHAPTER 8: Noise Model
Flicker Noise..................................................................................................8-1
Parameters................................................................................................8-1
Expressions ..............................................................................................8-1
Channel Thermal Noise .................................................................................8-3
Noise Model Flag...........................................................................................8-4
CHAPTER 9: MOS Diode Model
MOS Diode DC Current Model.....................................................................9-1
Model Equations ......................................................................................9-1
Parameters................................................................................................9-4
MOS Diode Capacitance Model ....................................................................9-4
Model Equations ......................................................................................9-4
Parameters................................................................................................9-7
APPENDIX A: Parameter List
BSIM3v3 Model Control Parameters ............................................................A-1
DC Parameters ...............................................................................................A-1
AC and Capacitance Parameters....................................................................A-6
NQS Parameters.............................................................................................A-7
dW and dL Parameters...................................................................................A-8
Temperature Parameters.................................................................................A-9
Flicker Noise Model Parameters....................................................................A-10
Process Parameters ........................................................................................A-10
Bin Description Parameters ...........................................................................A-11
Model Parameter Notes .................................................................................A-12
APPENDIX B: Equation List
I-V Model ......................................................................................................B-1
Threshold Voltage ....................................................................................B-1
Effective Vgs-Vth ....................................................................................B-2
Mobility ...................................................................................................B-3
Drain Saturation Voltage..........................................................................B-3
Effective Vds ...........................................................................................B-5
Drain Current Expression ........................................................................B-5
Substrate Current .....................................................................................B-6
Polysilicon Depletion Effect ....................................................................B-6
Effective Channel Length and Width.......................................................B-7
Drain/Source Resistance .........................................................................B-8
Temperature Effects .................................................................................B-8
Capacitance Model Equations .......................................................................B-9
Dimension Dependence ...........................................................................B-9
Overlap Capacitance (for NMOS) ...........................................................B-10
Instrinsic Charges.....................................................................................B-10
Intrinsic Capacitances (with Body bias and DIBL).................................B-13
NQS Model Equations:..................................................................................B-14
Flicker Noise..................................................................................................B-15
Channel Thermal Noise .................................................................................B-16

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