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发表于 2006-8-8 11:12:00
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A 2.4-GHz CMOS Receiver for IEEE 802.11 Wireless LAN’s
Abstract—This paper describes a radio-frequency receiver targeting
spread-spectrum wireless local-area-network applications
in the 2.4-GHz band. Based on a direct-conversion architecture,
the receiver employs partial channel selection filtering, dc offset
removal, and baseband amplification. Fabricated in a 0.6-m
CMOS technology, the receiver achieves a noise figure of 8.3 dB,
IP3 of
Index Terms—Low noise amplifier (LNA’s), mixers, receivers,
RF CMOS, wireless local area networks (LAN’s).
CMOS Technology Characterization
for Analog and RF Design
Abstract— The design of analog and radio-frequency (RF)
circuits in CMOS technology becomes increasingly more difficult
as device modeling faces new challenges in deep submicrometer
processes and emerging circuit applications. The sophisticated set
of characteristics used to represent today’s “digital” technologies
often proves inadequate for analog and RF design, mandating
many additional measurements and iterations to arrive at an
acceptable solution. This paper describes a set of characterization
vehicles that can be employed to quantify the analog behavior
of active and passive devices in CMOS processes, in particular,
properties that are not modeled accurately by SPICE parameters.
Test structures and circuits are introduced for measuring speed,
noise, linearity, loss, matching, and dc characteristics.
Index Terms—Analog circuits, device noise, mismatch, MOS
devices, RF circuits, technology characterization.
A 900-MHz/1.8-GHz CMOS
Transmitter for Dual-Band Applications
Abstract—The design of a radio-frequency transmitter that
can operate in two bands while employing a minimal number
of external components entails many challenges at both the
architecture and the circuit levels. This paper describes the
design of a 900-MHz/1.8-GHz transmitter implemented in CMOS
technology for dual-band applications. Configured as a two-step
architecture, the circuit generates the first upconverted signal
in quadrature form and subsequently performs single-sideband
modulation to produce the output in two bands. Fabricated
in a 0.6-m digital CMOS technology, the transmitter exhibits
unwanted spurs 40 dB below the carrier while drawing 75 mW
from a 3-V supply.
Index Terms—Gaussian minimum shift keying (GMSK) modulators,
radio-frequency (RF) CMOS circuits, single-sideband
(SSB) mixers, wireless transceivers. |
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