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[综合资料] Second Edition from Artech House

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发表于 2006-6-2 16:11:00 | 显示全部楼层 |阅读模式
最新版[I]RF Power amplifier Design[/I] from Artech House.
将其中PA Bias circuit design部分上传.



【文件名】:0662@52RD_Power amplifier bias design.pdf
【格 式】:pdf
【大 小】:226K
【简 介】:
【目 录】:The oscillatory habits of RF power transistors are an infamous aspect of RF power
amplifier design. This much-dreaded skeleton jumps out of its closet at the most
inconvenient times, frequently causing destruction and panic in its wake. Its effects
are most prevalent at lower frequencies in the MHz to VHF range, where the terminating
impedances of an RF power device are mainly defined by the bias insertion
networks. The design of bias networks for any RF power amplifier therefore plays
an important part in establishing stable operation.



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