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李缉熙博士于1979至1984年,以及1987至2001年间，服务于美国摩托罗拉(Motorola)的无线通讯系统部门达20年之久. 他的职掌涵盖非常广泛：從声频 (Acoustic)到射频(RF)，從软体到硬体设计.
o 在服务于Motorola的射频技术中心RFTC(RF Technology Center)以及无线电集成电路技术中心WITC(Wireless Integrated Technology Center)的大多数年份, 他致力于RF以及RFIC设计. 包括 Tunable filter,LNA,PA,Mixer,VCO等. 他是可攜式无线电与蜂巢式无线电(Cellular radio)前端的射频集成电路芯片(RFIC)的先驱者. 在Motorola, 他第一位利用 GCMOS制程成功研发出1瓦到2瓦的芯片功率放大器. 他发明了卓越的可调式滤波器(Tunable filter), 双线以及环状平衡非平衡器(Dual-line and Toroidal Balun). 除了在RF以及RFIC设计方面的研究，多年來也致力於声频(Acoustic)以及数位软体设计(Digital Software Design).
o 在1985至1986年间，他在美国德州达拉斯的德州仪器(Texas Instruments)工作。從事直播卫星系统(Direct Broadcast Satellite, DBS)的设计. 他是DBS小组的技术负责人, 带领着25位工程師從事研发工作.
o 在1986至1987年间他在新泽西州普林斯頓的RCA从事通讯卫星(Communication Satellite)设计. 他参加过4个通讯卫星设计,其中之一是台湾的通讯卫星计划. 在这项计划中,他独自完成通讯卫星的估算(Link budget).
o 在1990至2000年间,他担任工研院电通所RF技术顾问。时间長达十年之久.
o 拥有5项美国专利,並有數十項专题研究报告.
o 李博士也是“高空大气(Upper Atmosphere)”一书的作者之一. 這本书于1963年在北京出版.
o 李缉熙博士的所著新书, “Key Issues in RF/RFIC Circuit Design” 于2004年年底出版.
【文件名】:1051@52RD_Key Issues in RF and RFIC Circuit Design.rar
【格 式】:rar
【大 小】:2718K
【简 介】:
【目 录】:
目录如下：
CONTENTS
PREFACE xi
PART I INDIVIDUAL RF BLOCKS 1
1 LNA (LOW NOISE AMPLIFIER) 3
1.1 Introduction / 3
1.2 Single-Ended Single Device LNA / 4
1.3 Single-Ended Cascode LNA / 41
1.4 LNA with AGC (Automatic Gain Control) / 66
References / 73
2 MIXERS 75
2.1 Introduction / 75
2.2 Passive Mixers / 78
2.3 Active Mixers / 88
2.4 Design Schemes / 99
Appendices / 108
References / 110
3 DIFFERENTIAL PAIRS 113
3.1 Why Differential Pairs? / 113
3.2 Can DC Offset be Blocked by a Capacitor? / 121
3.3 Fundamentals of Differential Pairs / 126
3.4 CMRR (Common Mode Rejection Ratio) / 138
v
vi CONTENTS
Appendices / 148
References / 154
4 RF BALUN 155
4.1 Introduction / 155
4.2 Transformer Baluns / 158
4.3 LC Baluns / 181
4.4 Micro Strip Line Baluns / 191
4.5 Mixed Types of Baluns / 195
Appendices / 198
References / 217
5 TUNABLE FILTERS 219
5.1 Tunable Filters in Communication Systems / 219
5.2 Coupling Between Two Tank Circuits / 221
5.3 Circuit Description / 227
5.4 Effect of Second Coupling / 228
5.5 Performance / 232
References / 236
6 VCO (VOLTAGE-CONTROLLED OSCILLATOR) 237
6.1 “Three-Point” Type Oscillators / 237
6.2 Other Single-Ended Oscillators / 244
6.3 VCO and PLL / 249
6.4 Design Example of a Single-Ended VCO / 259
6.5 Differential VCO and Quad Phases VCO / 269
References / 275
7 POWER AMPLIFIERS (PA) 277
7.1 Classifi cations of Power Amplifi ers / 277
7.2 Single-Ended PA Design / 283
7.3 Single-Ended PA-IC Design / 287
7.4 Push-Pull PA Design / 288
7.5 PA with Temperature Compensation / 312
7.6 PA with Output Power Control / 315
7.7 Linear PA / 317
References / 320
CONTENTS vii
PART II DESIGN TECHNOLOGIES AND SCHEMES 323
8 DIFFERENT METHODOLOGY BETWEEN RF AND DIGITAL
CIRCUIT DESIGN 325
8.1 Controversy / 325
8.2 Differences between RF and Digital Blocks in a Communication
System / 329
8.3 Conclusion / 332
8.4 Notes for High-Speed Digital Circuit Design / 332
References / 333
9 VOLTAGE AND POWER TRANSPORTATION 334
9.1 Voltage Delivered from a Source to a Load / 334
9.2 Power Delivered from a Source to a Load / 342
9.3 Impedance Conjugate Matching / 350
9.4 Additional Effects of Impedance Matching / 362
Appendices / 372
References / 376
10 IMPEDANCE MATCHING IN NARROW-BAND CASE 377
10.1 Introduction / 377
10.2 Impedance Matching by Means of Return Loss Adjustment / 380
10.3 Impedance Matching Network Built of One Part / 385
10.4 Impedance Matching Network Built of Two Parts / 391
10.5 Impedance Matching Network Built of Three Parts / 402
10.6 Impedance Matching When ZS or ZL Is Not 50 Ω / 408
10.7 Parts in an Impedance Matching Network / 413
Appendices / 413
References / 445
11 IMPEDANCE MATCHING IN A WIDE-BAND CASE 447
11.1 Appearance of Narrow- and Wide-Band Return Loss on a Smith
Chart / 447
11.2 Impedance Variation Due to Insertion of One Part per Arm or per
Branch / 453
11.3 Impedance Variation Due to the Insertion of Two Parts per Arm or
per Branch / 462
11.4 Impedance Matching in IQ Modulator Design for a UWB
System / 468
11.5 Discussion of Wide-band Impedance Matching Networks / 495
References / 500
viii CONTENTS
12 IMPEDANCE AND GAIN OF A RAW DEVICE 501
12.1 Introduction / 501
12.2 Miller Effect / 503
12.3 Small Signal Model of a Bipolar Transistor / 507
12.4 Bipolar Transistor with CE (Common Emitter) Confi guration / 511
12.5 Bipolar Transistor with CB (Common Base) Confi guration / 526
12.6 Bipolar Transistor with CC (Common Collector) Confi guration / 539
12.7 Small Signal Model of a MOSFET Transistor / 547
12.8 Similarity between Bipolar and MOSFET Transistors / 552
12.9 MOSFET Transistor with CS (Common Source)
Confi guration / 563
12.10 MOSFET Transistor with CG (Common Gate) Confi guration / 573
12.11 MOSFET Transistor with CD (Common Drain) Confi guration / 579
12.12 Comparison of Bipolar and MOSFET Transistors in Various
Confi gurations / 584
References / 587
13 IMPEDANCE MEASUREMENT 588
13.1 Introduction / 588
13.2 Scale and Vector Voltage Measurement / 589
13.3 Direct Impedance Measurement by Network Analyzer / 593
13.4 Alternative Impedance Measurement by Network Analyzer / 603
13.5 Impedance Measurement with the Assistance of a Circulator / 607
Appendices / 608
References / 610
14 GROUNDING 611
14.1 Implications of Grounding / 611
14.2 Possible Grounding Problems Hidden in a Schematic / 613
14.3 Imperfect or Inappropriate Grounding Examples / 614
14.4 “Zero” Capacitor / 620
14.5 Quarter Wavelength of Micro Strip Line / 632
Appendices / 643
References / 650
15 EQUIPOTENTIALITY AND CURRENT COUPLING ON THE
GROUND SURFACE 651
15.1 Equipotentiality on the Ground Surface / 651
15.2 Forward and Return Current Coupling / 664
15.3 PCB or IC Chip with Multi-metallic Layers / 674
CONTENTS ix
Appendices / 676
References / 683
16 RFIC (RADIO FREQUENCY INTEGRATED CIRCUIT) AND SOC
(SYSTEM ON CHIP) 684
16.1 Interference and Isolation / 684
16.2 Shielding for an RF Module by a Metallic Shielding Box / 687
16.3 Strong Desirability to Develop RFIC / 688
16.4 Interference Going Along an IC Substrate Path / 689
16.5 Solution for Interference Coming from the Sky / 695
16.6 Common Grounding Rules for an RF Module and RFIC
Design / 696
16.7 Bottlenecks in RFIC Design / 697
16.8 Prospect of SOC / 705
16.9 What Is Next? / 706
Appendices / 709
References / 715
17 MANUFACTURABILITY OF PRODUCT DESIGN 718
17.1 Introduction / 718
17.2 Implication of 6σ Design / 720
17.3 Approaching 6σ Design / 724
17.4 Monte Carlo Analysis / 728
Appendices / 735
References / 742
PART III RF SYSTEM ANALYSIS 743
18 MAIN PARAMETERS AND SYSTEM ANALYSIS IN RF
CIRCUIT DESIGN 745
18.1 Introduction / 745
18.2 Power Gain / 747
18.3 Noise / 758
18.4 Non-Linearity / 773
18.5 Other Parameters / 803
18.6 Example of RF System Analysis / 804
Appendices / 807
References / 814
INDEX 817 |
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