CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems

robertqi

【文件名】:08629@52RD_cmos active pixel image sensors for highly integrated imagin.pdf
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【简　介】:Abstract—A family of CMOS-based active pixel image sensors
(APS’s) that are inherently compatible with the integration of onchip
signal processing circuitry is reported. The image sensors
were fabricated using commercially available 2-m CMOS processes
and both p-well and n-well implementations were explored.
The arrays feature random access, 5-V operation and transistortransistor
logic (TTL) compatible control signals. Methods of
on-chip suppression of fixed pattern noise to less than 0.1%
saturation are demonstrated. The baseline design achieved a pixel
size of 40 m 40 m with 26% fill-factor. Array sizes of 28 
28 elements and 128  128 elements have been fabricated and
characterized. Typical output conversion gain is 3.7 V/e􀀀 for the
p-well devices and 6.5 V/e􀀀 for the n-well devices. Input referred
read noise of 28 e􀀀 rms corresponding to a dynamic range
of 76 dB was achieved. Characterization of various photogate
pixel designs and a photodiode design is reported. Photoresponse
variations for different pixel designs are discussed.
Index Terms—Active pixel sensor, cameras, CMOS image sensor
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