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【文件名】:06110@52RD_IGBT的应用特性.pdf
【简 介】:
【目 录】:I. Gate Drive Requirements ................................................................................1
I. A Impact of the impedance of the gate drive circuit on switching losses............1
I. B Impact of the gate drive impedance on noise sensitivity.................................2
I. C Impact of gate drive impedance on "dynamic latching" ..................................2
I. D Using gate voltage to improve short circuit capability.....................................3
I. E Contribution of "common emitter inductance" to the impedance of the gate
drive circuit............................................................................................................3
I. F Gate charge vs. input capacitance..................................................................3
II. Switching Trajectories and Safe Operating Area Considerations ..............4
III. Conduction Losses........................................................................................5
III. A Calculating the voltage drop from data sheet parameters ............................6
III.B Conduction model..........................................................................................6
IV. Losses in Hard Switching.............................................................................7
IV.A Calculation of switching losses with an ideal diode from data sheet
information ............................................................................................................7
IV.B Calculation of switching losses with an ideal diode from switching model ....7
IV.C Contribution of the diode reverse recovery ...................................................8
V. Trade-Off Between Conduction And Switching Losses: Device
Optimization ........................................................................................................8
VI. The Analysis: Methods To Calculate Junction Temperature And Power
Dissipation For A Given Operating Condition................................................12
VII. Brief Notes On Thermal Design.................................................................13
VIII. Replacing MOSFETs With IGBTs .............................................................14
VIII.A Power Dissipation .....................................................................................14
VIII. B Selecting IGBTs .......................................................................................16
【格 式】:pdf
【大 小】:225K